| PART |
Description |
Maker |
| HIP2060 HIP2060AS1 HIP2060AS2 HIP2060AS3 |
60V/ 10A Half Bridge Power MOSFET Array
60V, 10A Half Bridge Power MOSFET Array
20000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN 10 A, 60 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Intersil Corporation
Intersil, Corp.
|
| STD10PF06T4 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 10A条（丁）|52AA
|
STMicroelectronics N.V.
|
| IRFF024 |
60V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
HEXFET?TRANSISTORS
60V, N-CHANNEL
|
IRF[International Rectifier]
|
| D10SC6MR |
Schottky Rectifiers (SBD) (60V 10A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| 2N999 ST640 ST646 FT359 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 500MA I(C) | CAN
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|达林顿|进步党| 80V的五（巴西）总裁| 10A条一（c）|3
TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
|
STMicroelectronics N.V.
|
| SGC1060S |
Reverse Voltage 60V Forward Current 10A
|
Surge Components
|
| 2SC3748 2SA1471 |
60V/10A High-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| MP6801 |
TRANSISTOR,MOSFET POWER MODULE,3-PH BRIDGE,60V V(BR)DSS,10A I(D)
From old datasheet system
|
Toshiba.
|
| SGC1050S-15 |
Surface Mount Schottky Rectifier Reverse Voltage 50~60V Forward Current 10A
|
GOOD-ARK Electronics
|
| IRFY044CM |
60V 0.040Ω N-Channel HEXFET Power MOSFET(60V 0.040Ω N沟道 HEXFET 功率 MOS场效应管) 60V.040ΩN沟道HEXFET功率MOSFET60V.040Ω沟道的HEXFET功率马鞍山场效应管）
|
International Rectifier, Corp.
|
| FQT13N06L FQT13N06LTF FQT13N06LL99Z |
60V LOGIC N-Channel MOSFET
60V N-Channel Logic level QFET
60V LOGIC N-Channel MOSFET 2800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
